By A. R. Alvarez (auth.), A. R. Alvarez (eds.)
BiCMOS expertise and functions, moment Edition offers a synthesis of obtainable wisdom in regards to the mix of bipolar and MOS transistors in a standard built-in circuit - BiCMOS. during this re-creation all chapters were up to date and entirely new chapters on rising subject matters were extra. moreover, BiCMOS know-how andApplications, moment Edition presents the reader with a data of both CMOS or Bipolar technology/design a reference with which they could make proficient judgements concerning the viability of BiCMOS of their personal application.
BiCMOS expertise and purposes, moment Edition is essential analyzing for working towards built-in circuit engineers in addition to technical managers attempting to overview company matters relating to BiCMOS. As a textbook, this ebook is additionally acceptable on the graduate point for a unique themes path in BiCMOS. A common wisdom in equipment physics, processing and circuit layout is believed. Given the department of the publication, it lends itself good to a two-part path; one on expertise and one on layout. it will supply complicated scholars with a very good figuring out of tradeoffs among bipolar and MOS units and circuits.
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Example text
Device channel lengths are driven to smaller dimensions to achieve higher drive current and increased packing density associated with the corresponding reduced device size. For deep submicron devices, several of the aforementioned effects become increasingly severe. The reduction in Leff is limited by the threshold voltage rolloff associated with short channel and drain-induced barrier lowering effects, as well as punch through leakage current and hot electron reliability. These effects are minimized by decreasing the oxide thickness.
In BVCEO (fig. 59]. BVCEO is reduced due to both the increased collector doping adjacent to the base edge, and the reduced base Gummel number caused by the counterdoping of the base. 60]. 61]. 4 Horizontal Design Issues Besides vertical constraints, the horizontal dimensions play an important role in the intrinsic device parameters. Since the base resistance is proportional to the width of the emitter and inversely proportional to its length, narrow emitters with W/L aspect ratios of one third or less are preferred.
A. C. Holton, (Eds), "Submicron BiCMOS Technology for the 90s," SRC Topical Research Conference, Dec. 10 - 11, 1087. N. Anatha "BiCMOS Roadmap". 51] L. Wissel, E. Gould, "Can CMOS Resist the BiCMOS Challenge," 1991 Custom Int. , pp. 6. Chapter 2 BiCMOS Device Design, Optimization, and Scaling J. 0 Introduction The increasing acceptance of BiCMOS as a viable technology has brought to the forefront new challenges for the device physicist/designer. Ultimately, the device designer wishes to optimize the performance of the transistors while simultaneously maintaining process simplicity.