By Erik Sall.
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Extra resources for Implementation of flash analog-to-digital converters in silicon-on-insulator technology
Example text
It is thereby harder to make any general conclusions on the device density when comparing bulk CMOS technologies with SOI CMOS technologies for analog circuits. ¾º¿º Ê Ø ÓÒ À Ö Ò ×× Radiation particles incident upon a silicon wafer ionizes some of the silicon atoms. If the silicon is replaced by a thin-film silicon layer, like in SOI CMOS devices, the radiation particles are more likely to pass through the silicon thin-film without ionizing the silicon atoms in the thin-film. In the case of an SOI CMOS technology, the particles may still ionize some of the silicon atoms in the substrate, but since the active silicon layer is separated from the substrate by the buried oxide, the devices implemented in an SOI CMOS technology are less affected by the incident radiation [19, 44].
The ENOB is then calculated according to the following expression [43]. 5 bit compared with the ENOB at low input frequencies. 4. In addition, it is measured at the maximum sampling frequency fs,max . ¿º¿º ÙÖ Ó Å Ö Ø To compare the efficiency of different ADC designs a figure of merit (FoM) is required. The figure of merit can be defined in several ways [29, 64, 93]. 5 ERBW Input frequency ÙÖ ¿º Illustration of the effective resolution bandwidth. 13) which yields the energy per conversion step.
7 are commonly used for this purpose [42]. 7(a). 5 kΩ resistor. The capacitor is charged by the ESD voltage VESD . 7(b). The difference from the human body model is the absence of the human body resistance, and that the capacitor is increased to the double. The absence of the resistance implies that this model yield higher ESD currents compared with the human body model for the same VESD . 5 kW VESD + 100 pF (a) Human body DUT VESD + 200 pF DUT (b) Machine ÙÖ ¾º Illustration of (a) the human body model and (b) the machine model for ESD testing and design.