By Terry M. Tritt (Eds.)
Because its inception in 1966, the sequence of numbered volumes referred to as Semiconductors and Semimetals has distinct itself throughout the cautious number of recognized authors, editors, and individuals. The Willardson and Beer sequence, because it is well known, has succeeded in generating various landmark volumes and chapters. not just did a lot of those volumes make an influence on the time in their booklet, yet they remain well-cited years after their unique liberate. lately, Professor Eicke R. Weber of the college of California at Berkeley joined as a co-editor of the sequence. Professor Weber, a widely known specialist within the box of semiconductor fabrics, will extra give a contribution to carrying on with the sequence' culture of publishing well timed, hugely proper, and long-impacting volumes. the various contemporary volumes, equivalent to Hydrogen in Semiconductors, Imperfections in III/V fabrics, Epitaxial Microstructures, High-Speed Heterostructure units, Oxygen in Silicon, and others promise that this practice might be maintained or even expanded.Reflecting the actually interdisciplinary nature of the sphere that the sequence covers, the volumes in Semiconductors and Semimetals were and may remain of significant curiosity to physicists, chemists, fabrics scientists, and equipment engineers in glossy undefined.
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Extra resources for Recent Trends in Thermoelectric Materials Research I
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J. Goldsmid, A comparison of projected thermoelectric and thermionic refrigerators, J. Appl. , 85, 4066 (1999). G. S. Nolas, J. L. Cohn, and G. A. Slack, Effect of partial void filling on the lattice thermal conductivity of skutterudites, Phys. Rev. B, 58, 164 (1998a). G. S. Nolas, G. A. Slack, J. L. Cohn, and S. B. Schujman, The next generation of thermoelectric materials, Proceedings 17th International Conference on Thermoelectrics, Nagoya, Japan, IEEE, 294 (1998b). 24 H. Julian Goldsmid G. S.
The designations of A, B, C, and D are shown in Fig. 3. 5. 0 - Circle diam. 5324 a/d : 2 a/d : 3 a/d . 5324 placed on the extreme edges of the sample. A correction also exists for the placement of the contacts onto the sample (van der Pauw, 1961). If d is the distance from the edge of the sample to the contact point and D is the diameter of the sample, then the error in the resistivity is given by / : 9ln+1 ; (d/D)/(1 9 d/D),/2(ln 2). 6336 (4) Terry M. Tritt and Valerie M. Browning 36 Fig. 3.
25 27 28 29 29 31 36 39 43 45 47 48 I. Introduction During the 1950s and 1960s, there was a considerable amount of research activity in the field of thermoelectric materials. Alloys based on the Bi Te systems and Si Ge systems were some of the most widely studied \V V thermoelectric materials. These materials were extensively studied and optimized for their use in thermoelectric applications (solid state refrigeration and power generation) (Goldsmid, 1986; Rowe, 1995) and remain state-of-the-art materials for their specific temperature use.