By Kenneth J. Button
Read or Download Infrared and Millimeter Waves: Millimeter Components and Techniques, Pt 5 PDF
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Additional resources for Infrared and Millimeter Waves: Millimeter Components and Techniques, Pt 5
Sample text
Against this, the injecting contact two-layer structure demonstrates con siderable advantages in power and efficiency (Crowley et al, 1980). Un fortunately, the Schottky-like injecting contact has a strong current-tempera ture dependence (dl/dT), a feature that could lead to difficulties in producing a stable device. To understand the reasons for this effect, the operation of the injecting contact has to be considered in relation to the material velocityfield characteristic of Fig. 9. Ideally, electrons must be injected into the n layer with the satellite valley velocity, and this can be accomplished only by creating a high-field region at the cathode.
During the design process the crucial effect of device operating temperatures on the expected TED reliability is high lighted as a vital consideration. E. DEVICE MANUFACTURING TECHNOLOGY Efficient operation at millimeter-wave frequencies demands device structures capable of removing heat efficiently while minimizing parasitic losses. The fabrication of these diodes therefore requires optimization of the device geometry and metal contact technology in striving for good thermal design and device reliability.
These features are a consequence of indium phosphide's more temperature-stable velocity-field characteristics, which results in the device output power and conversion efficiency being relatively insensitive to active-layer temperature and hence to input power. 013 dB/°C and —8 MHz/°C, respectively. 03 dB/°C and from - 6 to - 8 M H z / ° C . The voltage and temperature characteristics of both n + -n-n+ TED materials detailed here are compatible with existing system requirements. I. G. 4 . 0 c >.